| Summary: | 碩士 === 臺灣大學 === 電子工程學研究所 === 98 === In our study, we used Ge nanocrystals embedded in SiO2 as the floating gate, create three layers of MOS devices. First, we use e-gun deposition a layer of amorphous Ge thin film, divided into three different thickness, on silicon dioxide.
And then useing of excimer laser annealing system ( ELA ) to shot at the amorphous Ge film .From the Raman measurements result ,we find that the signal in 300 cm -1 which is signal of crystal Ge and 270 cm -1 signal which is signal of amorphous Ge intensity ratio become larger, when the amorphous Ge film thickness reduces. Laser annealing with thiner amorphous Ge films,has better crystallinity. And to get the size of Ge nanocrystals by simulation of phonon confinement effect,.
From the capacitance - voltage, conductance - voltage, capacitance – time results to known the carrier distribution of the conducting current and then compare with the Raman analysis. We demonstrate that rapid thermal annealing of the oxide layer can repair defects in the oxide and achieve better retention.
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