Agglomerate Germanium quantum dot from different evaporated Germanium thin film thickness by laser annealing

碩士 === 臺灣大學 === 電子工程學研究所 === 98 === In our study, we used Ge nanocrystals embedded in SiO2 as the floating gate, create three layers of MOS devices. First, we use e-gun deposition a layer of amorphous Ge thin film, divided into three different thickness, on silicon dioxide. And then useing of exci...

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Bibliographic Details
Main Authors: Jhao-Hong Lin, 林昭宏
Other Authors: 管傑雄
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/12957881543389046204