Modeling the Parasitic Bipolar Device in the 40nm PD SOI NMOS Device Considering the Floating Body Effect
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === This thesis reports modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during DC and transient operations could be modeled. Durin...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70567925474109629782 |