Preparation of ZnO Micro/Nano Structures by Chemical Solution Method
碩士 === 臺灣大學 === 材料科學與工程學研究所 === 98 === ZnO is an II-VI semiconductor. It has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV. Generally, the growth of ZnO nanostructures requires complicated reaction and expensive equipments. But in this paper, we use a simple solution chemic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46141391652706647801 |