Fabrication of Back-Channel-Etched Bottom-Gate Amorphous-InGaZnO Thin Film Transistors

Fabrication of Back-Channel-Etched Bottom-Gate Amorphous-InGaZnO Thin Film Transistors

碩士 === 國立臺灣大學 === 光電工程學研究所 === 98 === The back-channel-etched (BCE)-type bottom-gate thin film transistor (TFT) structure is the most desired one for the rapidly growing oxide TFT technology due to merits such as simplicity, low cost, ease of device scaling, and compatibility with the existed main-s...

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Bibliographic Details
Main Authors:	Chia-Hsin Liao, 廖家欣
Other Authors:	Chung-Chih Wu
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/38739772329596413275

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