Fabrication of Back-Channel-Etched Bottom-Gate Amorphous-InGaZnO Thin Film Transistors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 98 === The back-channel-etched (BCE)-type bottom-gate thin film transistor (TFT) structure is the most desired one for the rapidly growing oxide TFT technology due to merits such as simplicity, low cost, ease of device scaling, and compatibility with the existed main-s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38739772329596413275 |