Si-rich Silicon Carbide Thin-Film Solar Cells
碩士 === 臺灣大學 === 光電工程學研究所 === 98 === The non-stoichiometric silicon carbide (Si1-xCx) film deposited by plasma enhanced chemical vapor deposition (PECVD) system. At the same gaseous flow ratio, chamber pressure and RF power, changing substrate temperature 250 and 450℃ affect the different deposition...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87479769395152966842 |