The Electrical and Structural Properties of Al/CeAlO/p-Si MIS Capacitors Fabricated by RF Sputtering
碩士 === 國立臺灣師範大學 === 機電科技研究所 === 98 === Ultra-thin high-k CeO2 and CeAlO films were independently deposited on p-type Si-substrate by RF magnetron co-sputtering as the gate insulators of metal-insulator-semiconductor (MIS) capacitors. The film deposition was carried out in the oxygen/argon (O2/Ar)...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21035709235740514540 |