Investigation on the performance of multi-quantum barriers in InGaN/GaN multi-quantum well light-emitting diodes
碩士 === 北台灣科學技術學院 === 機電整合研究所 === 98 === We introduce a structure of multi-quantum barriers (MQBs) into the multi-quantum well (MQW) heterostructures to improve the performance in light-emitting diodes.The InGaN/GaN MQW LEDs with and without MQBs were prepared by metal-organic vapor phase epitaxy sys...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45011918322993842670 |