Design and Analysis of Asymmetric LDMOSFET-based RF Transmit/Receive Switch Circuit

碩士 === 國立清華大學 === 半導體元件及製程產業研發碩士專班 === 98 === In recent years, following the introducing of state of the communication products, demands for power devices have risen substantially. In keeping with the trend of circuit integration, traditional vertical device needs to be changed to lateral structure...

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Bibliographic Details
Main Authors: Chen, Ching-Yu, 陳竫瑜
Other Authors: Gong, Jeng
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/41486487518095703660