準垂直型雙擴散金氧半場效電晶體特性分析
碩士 === 國立清華大學 === 半導體元件及製程產業研發碩士專班 === 98 === English Abstract In this thesis computer aided simulation tools are used to design a Quasi Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (QVDMOSFET). The proposed new structure QVDMOSFET has breakdown voltage BVOFF = 99.64 V...
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| Format: | Others |
| Language: | en_US |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98612909311637991747 |
| Summary: | 碩士 === 國立清華大學 === 半導體元件及製程產業研發碩士專班 === 98 === English Abstract
In this thesis computer aided simulation tools are used to design a Quasi Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (QVDMOSFET). The proposed new structure QVDMOSFET has breakdown voltage BVOFF = 99.64 V ; specific turn-on resistance RON,SP = 120.90 mΩ x mm2; and area size = 28.0 x 1μm2) . This thesis provides the research results of structural effect influence on BVOFF and RON,SP in QVDMOSFET.
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