準垂直型雙擴散金氧半場效電晶體特性分析
碩士 === 國立清華大學 === 半導體元件及製程產業研發碩士專班 === 98 === English Abstract In this thesis computer aided simulation tools are used to design a Quasi Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (QVDMOSFET). The proposed new structure QVDMOSFET has breakdown voltage BVOFF = 99.64 V...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98612909311637991747 |