應用電荷汲引技術於高介電係數閘極電晶體階段缺陷增生與空間之量測研究
碩士 === 國立清華大學 === 工程與系統科學系 === 98 === For satisfy ITRS rule to keep device scale down. General method use high-kapa material which replaced silicon dioxide MOSFET to overcome gate leakage problem. But there are more issues in the process. Such as charge trapping, threshold voltage shift, mobility...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26957212769329201613 |