Effects of Stacked High-k Blocking Layer on Charge-Trapping Flash Memory Devices
碩士 === 國立清華大學 === 工程與系統科學系 === 98 === When floaging gate device can't satisfy smaller device, SONOS-Type is the one of candidate to replace it. SONOS-Type device tunneling layer thickness is about 30A ,it is a problem for retention. How to improve our device performance is very important. In ou...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09742273730644922957 |