The design and analysis of 80V DDDMOSFET

• Main Authors: Ching Chih-Ming, 秦志銘
• Other Authors: Gong, Jeng
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/59504615008058157911

碩士 === 國立清華大學 === 電子工程研究所 === 98 === In this thesis, the design flow of DDDMOSFET in the 0.5um process is presented. In order to make the device suitable for highside circuits, N-type buried layer is added to the structure of DDDMOSFET. The efficiency for the different device structures is compared and the best design is tapeouted. Finally, the trend of electrical of the actual device is same to simulation The model include Quasi- saturation effect is presented.The simulator (MEDICI) provides the physical concepts of Quasi- saturation effect, the unique feature is originally attributed to the Kirk effect.Base on these physical insights, the DDDMOSFET model with a V_intrinsic controller is proposed. This model precisely depicts the drain current with high gate voltage.