Fabrication of U-GaN and InGaN MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 98 === This thesis investigates the fabrication of GaN MOSFETs utilizing Si as the implant species for the source and drain regions. In order to prevent nitrogen loss from the surface while keep ion implantation activation efficiency, we find the best annealing process...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58340536899178967574 |