High Performance Nitride-Based Power Semiconductor Devices
博士 === 國立清華大學 === 電子工程研究所 === 98 === GaN-based semiconductor materials play an important role for high power and high speed device and circuit applications. Compared with Si, GaN has higher breakdown field and electron drift velocity, which make GaN-based devices an excellent candidate for such appl...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67150604990580879973 |