| Summary: | 碩士 === 南榮技術學院 === 工程科技研究所碩士班 === 98 === The R.F magnetron sputtering technique is employed in this study , thin films were deposited on the glass and silicon wafer by using the targets of ZnO, ZnO doped Al (2wt%, ZnO:Al), and ZnO doped Ti (1.5wt%, ZnO:Ti) materials. The atmosphere of reaction chamber containing a mixture of argon and oxygen gas by suitable controlling the ratio of O2 /Ar and R.F power, the ZnO thin film with C-axis preferred orientation can be obtained. The microstructure and properties of the thin films were investigated by using X-ray diffractometer、SEM、α- step、UV-Vis and four-point probe method.
The optimum of electro-optical properties was provided by varying the sputtering power and sputtering time from laboratory hand-made targets. It was found that the relative of low sheet resistance and high transmittance rate can be obtained by under the conditions at 3m Torr of sputtering pressure, 300 sccm of mixture argon and oxygen working gas flow, 100 W of sputtering power, and 30 minutes of sputtering time. In this study, the sheet resistance was 24.93Ω/□ and the optical transmittance rate was greater than 80% in the range of 300 to 900 nm wavelength on silicon wafer.
Keywords：R.F magnetron sputtering、target、ZnO:Al、sheet resistance
|
|---|
