The study of magnetic field for vacuum magnetron sputtering by finite element method

• Main Authors: Jin-Jhu Guo, 郭金柱
• Other Authors: Po-Jen Cheng
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/72202303522072194656

碩士 === 南榮技術學院 === 工程科技研究所 === 98 === Magnetron sputtering system is a modern one of the most important coating methods, with the high sputtering rate, high deposition rate, low substrate temperature, coating quality and good features, but the low target utilization is the disadvantage. Therefore how to improve the utilization rate target is currently important issue. This article investigates the impact of the magnetic field magnetron sputtering target parameters, including magnet shape, height and width difference between inside and outside of the magnet, magnetic seat height difference between inside and outside, add the opposite polarity and same-polarity magnet. These parameters will be used as the basis to improve a follow-up rectangular plane sputtering target. The experimental results showed that the depth of differences on both sides of the runway target line has been reduced and the target utilization rate has been 3.78% increased. To improve rectangular plane magnetron sputtering targets, a modified design of the magnetic field of the ends is proposed. The width of magnets of the lateral ends is increased, such that the magnetic field strength between inside and outside is almost the same. The process of plasma sputtering can uniformly bombard on both sides. The target utilization rate increases substantially, production cost is lower and the competitiveness is increased. Keywords: magnetron sputtering, magnetic field simulation