Resistive Switching Properties of V-doped SrZrO3 Memory Devices

碩士 === 國立東華大學 === 電機工程學系 === 98 === Modern semiconductor nonvolatile memories, such as Flash memory, have been successfully scaled down to achieve large capacity memories through the improvements in photolithography technology. However, conventional memory scaling is expected to come up against tech...

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Bibliographic Details
Main Authors: Wei-Ting Ho, 何威霆
Other Authors: Chun-Chieh Lin
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/55413429752614702306