Investigation of In-rich InGaN Epilayer Grown on GaN Template Using Varied Buffer Structures
碩士 === 國立彰化師範大學 === 光電科技研究所 === 98 === In this thesis, growth conditions and characteristics of c-axis oriented In-rich InGaN epilayers grown on GaN template using molecular beam epitaxy (MBE) were studied. In chapter one, fundamental characteristics and applications of In-rich InGaN materials were...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98503408359891196473 |