Characteristics of Tunneling Magnetoresistance Arrays Fabricated by using Atomic Force Microscope

碩士 === 國立彰化師範大學 === 光電科技研究所 === 98 === ABSTRACT RF magnetron sputtering systems were used to grow La0.75Ca0.15Sr0.1MnO3 (LCSMO) thin film with 120 nm in the experiment. Then, the atomic force microscope lithography technology was used on the sample. When the bias voltage changes getting bigger and t...

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Bibliographic Details
Main Author: 李宥銘
Other Authors: 洪連輝
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/57640118353260912606