Characteristics of Tunneling Magnetoresistance Arrays Fabricated by using Atomic Force Microscope
碩士 === 國立彰化師範大學 === 光電科技研究所 === 98 === ABSTRACT RF magnetron sputtering systems were used to grow La0.75Ca0.15Sr0.1MnO3 (LCSMO) thin film with 120 nm in the experiment. Then, the atomic force microscope lithography technology was used on the sample. When the bias voltage changes getting bigger and t...
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Format: | Others |
Language: | zh-TW |
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2010
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Online Access: | http://ndltd.ncl.edu.tw/handle/57640118353260912606 |