Study in Forming Quasi-Crystal Si Film on Porous Silicon layer without Epitaxy
碩士 === 國立中央大學 === 機械工程研究所 === 98 === The Silicon on Insulator (SOI) is one of the most developmental material in the process of semiconductor now, which can effectively solve the problem in the process of nanometer scale , like leakage effect, latch up. Smart-Cut? is a common technology for manufact...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49797402268205899200 |