Implementations on Fully Integrated Silicon-based Class-E Power Amplifiers and Ka-Band pHEMT Power Amplifier

• Main Authors: Meng-wei Pan, 潘孟偉
• Other Authors: Hwann-kaeo Chiou
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/36892139873266514702

碩士 === 國立中央大學 === 電機工程研究所 === 98 === In this thesis, power amplifiers were designed into both silicon-based and pHEMT technologies. Firstly, fully integrated silicon-based high-efficiency Class-E power amplifiers using SiGe and CMOS processes were designed with low-loss impedance matching transformers technique. Secondly, a fully integrated Ka-band pHEMT power amplifier was implemented. The measured results are summarized as below: the CMOS Class-E power amplifier (PA) using transmission line transformer (TLT) technique achieves a power gain of 13.24 dB, an output power at 1-dB gain compression point (P1dB) of 23.2 dBm, a saturation output power (Psat) of 24.7 dBm and a power-added efficiency (PAE) of 33.24 %. The two-stage CMOS Class-AB/Class-E power amplifier using transmission line transformer technique achieves a power gain of 17.2 dB, a P1dB of 17.2 dBm, a Psat of 20.03 dBm and a PAE of 17.7 %. The SiGe Class-E power amplifier with balun transformer achieves a power gain of 11.16 dB, a P1dB of 20.85 dBm, a Psat of 22.83 dBm and a PAE of 38.41 %. The Ka-band pHEMT power amplifier achieves a power gain of 15.7 dB with input return and output return losses of 18.4 dB and 6.1 dB, a P1dB of 18.7 dBm, a Psat of 19.7 dBm and a PAE of 24.4 %.