Implementations on Fully Integrated Silicon-based Class-E Power Amplifiers and Ka-Band pHEMT Power Amplifier
碩士 === 國立中央大學 === 電機工程研究所 === 98 === In this thesis, power amplifiers were designed into both silicon-based and pHEMT technologies. Firstly, fully integrated silicon-based high-efficiency Class-E power amplifiers using SiGe and CMOS processes were designed with low-loss impedance matching transforme...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36892139873266514702 |