Germanium Quantum Dot Metal-Oxide-Semiconductor Photodiodes and Poly-Si Thin-Film Transistors
博士 === 國立中央大學 === 電機工程研究所 === 98 === This thesis investigates the device physics and electrical characteristics of Ge-QD photodiodes (PDs) and hototransistors (PTs) fabricated in a complementary metal-oxide-semiconductor (CMOS) process. The main features encompass as follows. First, thermally oxidiz...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/25413581707109533642 |