Fabricateion of 2-D periodic arrays of low-resistivity nickel silicide nanodots on (001)SiGe substrate

• Main Authors: Cheng-yan Zhan, 詹承彥
• Other Authors: Shao-Liang Cheng
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/55136903201301655313

碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 98 === In this study, we demonstrated that large-area, 2-D well-ordered arrays of Ni/amorphous-Si bilayer nandods were successfully fabricated on (001)Si0.7Ge0.3 substrate by nanosphere lithography. The phase transformated and structureal evolution of the Ni silicide nanocontacts after different heat treatments were investigated. Based on the TEM and SAED analyses, it is found that low-resistivity NiSi nanodots were successfully grown on Si0.7Ge0.3 substrate at an annealing temperature as low as 350 ℃, and the crystal structure of the grown NiSi was polycrystalline. NiSi nanodots exhibit excellent thermal stability after annealing at 800 ℃. The TEM images revealed that the shape of nanodots was not significantly changed and no Ge segregation were found after annealing. With an interposing a-Si film as the sacrificial layer, the thermal stability of NiSi nanodot was significantly improved. Many fine nanowires of 15-40 nm in diameter were observed from the regions of nanodots after annealing at 900 ℃. Selected-area electron diffraction and TEM/EDS analysis indicated that the nanowires were composed of Si and O and their structure was amorphous SiOx(a-SiOx) nanowires could be explained by the solid-liquid-solid (SLS) mechanism.