Fabrication and Characterization of Novel Poly-Si Nanowire SONOS Devices

• Main Authors: Hsuan-Yun Huang, 黃瑄勻
• Other Authors: Horng-Chih Lin
• Format: Others
• Language: en_US
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/09784184643964341317

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 98 === In this thesis, poly-Si nanowire (NW) SONOS devices with various multiple-gated (MG) configurations were fabricated by utilizing a simple and low-cost technique. With a slight modification in the fabrication procedure, three different types of MG configuration, namely, SG, ΩG, and gate-all-around (GAA), were realized in the fabricated devices. It thus allows us to unambiguously investigate the impacts of different MG configurations on the basic electrical characteristics. The experimental results show that much improved device characteristics with GAA devices are achieved as compared with the other types of devices, owing to the superior gate controllability over NW channel with the GAA structure, which results in a higher ON-current, suppressed short channel effects, and steeper sub-threshold swing (SS) for NWs. For SONOS characterization, we confirmed that the round-shape GAA NW channel exhibits the best performance in P/E characteristics among all splits. For reliability issues, the GAA devices also exhibit good data retention and endurance characteristics. The memory window can be larger than 0.5 V after 10 years for a device after subjecting to 104 times of P/E cycles at room temperature.