Epitaxial Growth of GaN with Graded AlGaN on Patterned Silicon (111) Substrates by Metal-Organic Chemical Vapor Deposition
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 98 === GaN shows a lot of excellent physical characteristics, such as wide band gap, high breakdown field and high saturated drift velocity, which are suitable for high voltage and high power electronic device applications. In the past, the research on GaN...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44474817522545752509 |