Extremely low stress UV-transparent Silicon nitride films deposited by plasma enhanced chemical vapor deposition
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 98 === Material and physical properties of silicon nitride (Si3N4) films deposited by plasma enhanced chemical vapor deposition (PECVD) are significantly affected by the gas flow rate of NH3 and SiH4 during the film deposition. When RF power is sufficient,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01060788010781652996 |