Characteristic of GaN-based Light-emitting Diodes Grown on Nano-pillar Template
碩士 === 國立交通大學 === 光電工程學系 === 98 === In this study, we presented high performance GaN-based light emitting diodes (LEDs) using a GaN nano-pillars (NPs) structure grown on c-plane sapphire substrate by integrating RF-plasma molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCV...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23715041070654187093 |