Reduction of efficiency droop behavior in InGaN/GaN light emitting diodes by optimization of active region
碩士 === 國立交通大學 === 光電工程學系 === 98 === Direct wide-bandgap gallium nitride (GaN) and other III-nitride-based semiconductors have attracted much attention for potential applications such as blue, green, and ultraviolet (UV) light-emitting diodes (LEDs) and blue laser diodes (LDs). Although InGaN-based L...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61821999388478224349 |