Study of Process Effects and Bias Stress Stability on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
碩士 === 國立交通大學 === 光電工程學系 === 98 === In this study, a complete experiment is performed to verify the origin of bias stress induced instability and a fabrication procedure is recommended to attain a stable amorphous In-Ga-Zn-O TFT (a-IGZO TFT). Three treatment phases, including as-deposited, post-anne...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76848648991507001393 |