Low-Noise Receiver/ Up- Converter Using V-NPN BJT/ Schottky Diode n Standard CMOS Process,
碩士 === 國立交通大學 === 電信工程研究所 === 98 === This thesis includes three parts. First, we realize a receiver by utilizing CMOS 0.18μm parasitic vertical BJTs in the mixer LO core to reduce flicker noise for the low-power Wireless PAN RF front-end. In the mean time, we implement a fully-integrated 60GHz up-co...
Main Authors: | Wang, Chia-Ling, 王嘉苓 |
---|---|
Other Authors: | Meng, Chin-Chun |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/03492272205211674452 |
Similar Items
-
CMOS Flicker Noise Solutions by Low-IF Receiver Architecture and Deep-N-Well BJT Direct-Conversion Receiver
by: Syu, Jin-Siang, et al.
Published: (2011) -
Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown
by: Williams, David Elliott
Published: (2018) -
Characterization and modeling of parasitic BJT in CMOS technology
by: Wan-Yu Liao, et al.
Published: (1995) -
Analysis of BJT and HBT noise performance
by: B.C. Zsou, et al.
Published: (2003) -
Size Optimization of Silicon Schottky Diode and SiGe BiCMOS 5/60GHz Receiver Using 60GHz Schottky Diode Sub-Harmonic Mixer
by: Chiu, Jhih-Huei, et al.
Published: (2014)