The Growth of Non-polar a-plane GaN by HVPE

碩士 === 國立交通大學 === 電子物理系所 === 98 === In this research, we first investigated the growth mechanism of non-polar a-plane GaN thick films on MOCVD template by hydride vapor phase epitaxy (HVPE). The surface morphology and crystal quality of a-plane GaN thick films were studied by various growth paramete...

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Bibliographic Details
Main Authors: Hung, Wen, 洪文
Other Authors: Lee, wei-I
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/09953754008013346364

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