Electrical Analysis and Reliability
碩士 === 國立交通大學 === 電子研究所 === 98 === The electrical characteristics and reliability of HfO2/TiN gate metal-oxide- semiconductor field effect transistors (MOSFETs) are investigated by analyzing experimental data from charge pumping, split C-V, DC Id-Vg, and pulse Id-Vg measurements. We have found that...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48274227565068246179 |