A Study on Device Characteristics and Hot-Carrier Effects of P-Channel Metal-Induced-Lateral Crystallized Poly-Si Thin-Film Transistors
碩士 === 國立交通大學 === 電子研究所 === 98 === In this study, we have fabricated a novel test structure to analyze the effects of location-dependent film crystallinity and reliability issues in p-channel MILC TFTs. By using this unique structure, impacts of the film crystallinity on device characteristics can b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32c5a4 |