Effects of Carbon Ion Implantation on NiSi Thermal Stability and Si-C Formation
碩士 === 國立交通大學 === 電子研究所 === 98 === In this thesis, we use carbon plasma immersion ion implantation (CPIII) and low temperature carbon ion implantation as carbon implantation source. We applied the two processes on the application of increase NiSi thermal stability and Si-C formation. On the research...
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| Format: | Others |
| Language: | en_US |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13169771774187244032 |