| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 98 === This thesis focus on fabrication of InAs quantum dot edge emitting lasers with dry etched mirror. First, we demonstrated a new process flow of edge emitting lasers with dry etched mirror formed by inductivity coupled plasma. Before fabrication of quantum dot edge emitting lasers, we used the laser structure of InGaAs quantum well to prove that the process is practical. Eventually, we make a success of quantum dot lasers with dry etched mirrors.
Then in measurement, we estimate the mirror loss of the dry etched mirror laser by comparing the characteristic curves of the etched mirror laser with those of a cleaved mirror laser. Finally, we improve the characteristics of dry etched mirror laser by increasing the etching depth with skilled process.
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