Radio Frequency Performance of Asymmetric- Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect Transistors
博士 === 國立交通大學 === 電子工程系所 === 98 === We report the performance of 0.18 ?慆 RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain (LDD) design. Such devices do not have an n+ drain extension using a foundry-standard 1P6M process, without making any process modifications and exhibited better character...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74407861709321440312 |