The Carrier Transport and Channel Backscattering Characteristics of Nanoscale Schottky-Barrier MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 98 === In advanced VLSI devices, a lot of new structures have been brought up for enhancing drain current such as strained-Si channel, high-κ dielectric, metal gate and metal source/drain. In the nanoscale channel length, the channel backscattering theory has been applie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27151385660472349230 |