Study of porous silicon for anti-reflection applications
碩士 === 國立交通大學 === 材料科學與工程學系 === 98 === iii nitric acid is lower than 40% in volume, porous etching occurs. The transition between porous formation and polishing etching occurs when nitric acid content is lager than 40%. Pore size distributes uniform on the surface of wafer. Stain etching also pro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39117819980194914003 |