The Study of InAs-Channel High Electron Mobility Transistors for High Frequency and Ultra-Low Power Applications
博士 === 國立交通大學 === 材料科學與工程學系 === 98 === High performance InAs-channel high electron mobility transistors (HEMTs) have been fabricated and characterized for high frequency and high speed logic low-power consumption applications. The performance of the InAs-channel HEMTs was improved by optimizing the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70478511755630612263 |