Interface morphology and electrical properties of bonded GaAs/GaAs and GaAs/Ge wafers
碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === The study of III-V materials has played an important role in semiconductor industry recrntly. GaAs material has varies outstanding advantages such as direct bandgap, high efficiency, radiation resistant, high temperature resistant and so on. Different types of...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40430460375237600540 |