Study of High-k/III-V MOS Capacitors
碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === Due to its superior carrier transport capability, III-V based MOS field effect transistor technology has the potential of being used for future high frequency low power application. However, the lack of high quality native oxides has been the obstacle for years...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59642490333001311695 |