AlGaN-based Schottky Barrier Ultraviolet Photodetector with Micropillar Structures
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === In this study, we demomstrated a single AlGaN layer with two different Al contents on the GaN μ-pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelength of the AlGaN layer were at 340 and 32...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71019778652652679160 |