The Fabrication and Characterization of InGaZnO Thin-FilmTransistors Using HfSiO High-k Gate Dielectrics

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === Indium-Gallium doped ZnO (IGZO) thin-film-transistors (TFTs) have attracted considerable attention due to their potentials toward new driving and pixel switch components for liquid crystal display and novel applications such transparent and flexible electron...

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Bibliographic Details
Main Authors: Hau-YuanHuang, 黃?源
Other Authors: Shui-Jinn Wang
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/25561317363684586174