The Study of STI Strain Engineering and SiON gate dielectric by Decoupled Plasma Nitridation for advanced CMOS Technology Applications
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === In this dissertation, we study the impact of strain engineering and poly gate technologies on nano meter scale MOSFETs performances in detail. The study is divided in five parts. In the chapter 2, we propose improved STI process on MOSFET technology. Shallow...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37152670569306747521 |