The Electro-optic Properties of GaAs1-xSbx and InN/GaN Multiple Quantum Wells Studied by Photoreflectance and Photoluminescence
碩士 === 國立成功大學 === 物理學系碩博士班 === 98 === Room-temperature photoreflectance (PR) is employed to investigate the Fermi level pinning and surface state density of the GaAs1-xSbx surface intrinsic-n+(SIN+) structures with different Sb concentration. Based on the thermionic emission theory and current-trans...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/24025837582342406403 |