Effects of embedding Au layer on the resistive switching characteristics of NiO memory devices

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 98 === In this research, nickel oxide(NiO) thin films were deposited by reactive sputtering from nickel(Ni) target. Resistance random access memory(RRAM) devices were fabricated using NiO film without embedded Au layer(Al/NiO/Pt), NiO film without embedded Au laye...

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Bibliographic Details
Main Authors: Yung-SungLin, 林永崧
Other Authors: Jen-Sue Chen
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/04981670917424214367